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NTMFS4899NF
Power MOSFET
30 V, 75 A, Single N ? Channel, SO ? 8 FL
Features
? Integrated Schottky Diode
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
5.0 m W @ 10 V
7.5 m W @ 4.5 V
N ? CHANNEL MOSFET
D
I D MAX
75 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
Gate ? to ? Source Voltage
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
V GS
I D
P D
± 20
17.8
12.9
2.70
V
A
W
G
S
4899NF
S
Continuous Drain
Current R q JA v
10 sec
Power Dissipation
R q JA, t v 10 sec
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
I D
P D
I D
P D
I D
29.1
21
7.18
10.4
7.5
0.92
75
54
A
W
A
W
A
1
SO ? 8 FLAT LEAD S AYWZZ
CASE 488AA G
STYLE 1 D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
MARKING
DIAGRAM
D
D
D
Power Dissipation
R q JC (Note 1)
T C = 25 ° C
P D
48
W
Pulsed Drain
Current
t p =10 m s
T A = 25 ° C
I DM
188
A
ORDERING INFORMATION
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
T A = 25 ° C
I Dmaxpkg
T J ,
T STG
I S
dV/dt
90
? 55 to
+150
46
6
A
° C
A
V/ns
Device
NTMFS4899NFT1G
NTMFS4899NFT3G
Package
SO ? 8FL
(Pb ? Free)
SO ? 8FL
Shipping ?
1500 /
Tape & Reel
5000 /
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 V, V GS = 10 V,
I L = 41 A pk , L = 0.1 mH, R G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T L
84
260
mJ
° C
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
? Semiconductor Components Industries, LLC, 2012
September, 2012 ? Rev. 3
1
Publication Order Number:
NTMFS4899NF/D
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